FDN306P general description this p-channel 1.8v specified mosfet uses fairchild?s advanced low voltage powertrench process. it has been optimized for battery power management applications. applications ? battery management ? load switch ? battery protection features ? ?2.6 a, ?12 v. r ds(on) = 40 m ? @ v gs = ?4.5 v r ds(on) = 50 m ? @ v gs = ?2.5 v r ds(on) = 80 m ? @ v gs = ?1.8 v ? fast switching speed ? high performance trench technology for extremely low r ds(on) ? supersot tm -3 provides low r ds(on) and 30% higher power handling capability than sot23 in the same footprint g d s supersot -3 tm d s g absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?12 v v gss gate-source voltage 8 v i d drain current ? continuous (note 1a) ? 2.6 a ? pulsed ? 10 maximum power dissipation (note 1a) 0.5 p d (note 1b) 0.46 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 250 c/w r jc thermal resistance, junction-to-case (note 1) 75 c/w package marking and ordering information device marking device reel size tape width quantity 306 FDN306P 7?? 8mm 3000 units smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?12 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a,referenced to 25 c ?3 mv/ c i dss zero gate voltage drain current v ds = ?10 v, v gs = 0 v ?1 a i gssf gate?body leakage, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?8 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.4 ?0.6 ?1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a,referenced to 25 c 2.5 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ?2.6 a v gs = ?2.5 v, i d = ?2.3 a v gs = ?1.8v, i d = ?1.8 a v gs = ?4.5 v, i d = ?2.6a , t j =125 c 30 39 54 40 40 50 80 54 m ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?10 a g fs forward transconductance v ds = ?5 v, i d = ?2.6 a 10 s dynamic characteristics c iss input capacitance 1138 pf c oss output capacitance 454 pf c rss reverse transfer capacitance v ds = ?6 v, v gs = 0 v, f = 1.0 mhz 302 pf switching characteristics (note 2) t d(on) turn?on delay time 11 20 ns t r turn?on rise time 10 20 ns t d(off) turn?off delay time 38 61 ns t f turn?off fall time v dd = ?6 v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? 35 56 ns q g total gate charge 12 17 nc q gs gate?source charge 2 nc q gd gate?drain charge v ds = ?6 v, i d = ?2.6 a, v gs = ?4.5 v 3 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?0.42 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?0.42 (note 2) ?0.6 ?1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 250 c/w when mounted on a 0.02 in 2 pad of 2 oz. copper. b) 270c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width 300 s, duty cycle 2.0% FDN306P smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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